Samsung M378B5273CH0-CH9 4GB vs Crucial Technology CT8G4DFS824A.C8FE 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Crucial Technology CT8G4DFS824A.C8FE 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

15.1 13.2

测试中的平均数值
更快的写入速度，GB/s

9.7 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

13.2 15.1
写入速度，GB/s

8.4 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2589

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905403-090.A01LF 4GB

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Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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G Skill Intl F4-3000C15-16GTZ 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB