Samsung M378B5273CH0-CH9 4GB vs Kingston 9905711-038.A00G 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston 9905711-038.A00G 8GB

Kingston 9905711-038.A00G 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Kingston 9905711-038.A00G 8GB

需要考虑的原因
Kingston 9905711-038.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

17.1 13.2

测试中的平均数值
更快的写入速度，GB/s

13.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston 9905711-038.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

13.2 17.1
写入速度，GB/s

8.4 13.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 3181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT16G4S24AM.M16FE 16GB

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Samsung M378B5273CH0-CH9 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-2666C19-32GNT 32GB

G Skill Intl F4-2666C19-32GNT 32GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Corsair CMD32GX4M4B3000C15 8GB

Corsair CMD32GX4M4B3000C15 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB