Samsung M378B5273CH0-CH9 4GB vs Kingston ACR24D4S7D8MB-16 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Kingston ACR24D4S7D8MB-16 16GB

Kingston ACR24D4S7D8MB-16 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Kingston ACR24D4S7D8MB-16 16GB

需要考虑的原因
Kingston ACR24D4S7D8MB-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更快的读取速度，GB/s

14.9 13.2

测试中的平均数值
更快的写入速度，GB/s

9.1 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Kingston ACR24D4S7D8MB-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 35
读取速度，GB/s

13.2 14.9
写入速度，GB/s

8.4 9.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2487

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-030.A00LF 8GB

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Micron Technology 18ASF1G72PZ-2G3B1 8GB

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Apacer Technology D12.2324CS.001 8GB

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Kingston KHX2133C11D3/4GX 4GB

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Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965596-016.B01G 8GB

Kingston 9965596-016.B01G 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

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G Skill Intl F4-3733C17-8GTZA 8GB

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Kingston 99U5471-052.A00LF 8GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB