Samsung M378B5273CH0-CH9 4GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 -37% 更低的延时
更快的读取速度，GB/s

17.4 13.2

测试中的平均数值
更快的写入速度，GB/s

14.5 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 27
读取速度，GB/s

13.2 17.4
写入速度，GB/s

8.4 14.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMV4GX4M1A2400C16 4GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-3600C19-8GSXWB 8GB

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Elpida EBJ21UE8BDS0-DJ-F 2GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology BLS8G4D30BESBK.8FD 8GB