Samsung M378B5273CH0-CH9 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 71

左右 48% 更低的延时
更快的写入速度，GB/s

8.4 6.4

测试中的平均数值

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

报告一个错误

更快的读取速度，GB/s

15.6 13.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 71
读取速度，GB/s

13.2 15.6
写入速度，GB/s

8.4 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4C3200C15 4GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingston XN205T-HYD2 16GB

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