Samsung M378B5273CH0-CH9 4GB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 9.1

测试中的平均数值
更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

SK Hynix HMA41GR7MFR4N-TFTD 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TFTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 -3% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 36
读取速度，GB/s

13.2 9.1
写入速度，GB/s

8.4 7.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GU6CJR8N-XN 16GB

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Kingston KHX1866C10D3/4G 4GB

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Kingston MSI24D4S7S7MH-16 16GB

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Ramaxel Technology RMN1740EF48D8F-800 2GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Kingston KVR800D2N6/2G 2GB

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Essencore Limited KD48GU880-36A180U 8GB

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Apacer Technology 78.CAGP7.DFW0C 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Kingston X6TCK6-MIE 32GB

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AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-3000C15-8GRKB 8GB

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Mushkin MR[A/B]4U280HHHH8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Team Group Inc. DDR4 3600 8GB

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Team Group Inc. Vulcan-1600 4GB

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Corsair CMSO8GX4M1A2133C15 8GB

Corsair CMSO8GX4M1A2133C15 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB