Samsung M378B5273CH0-CH9 4GB vs SK Hynix HMA81GS6CJR8N-XN 8GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

SK Hynix HMA81GS6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 -3% 更低的延时
更快的读取速度，GB/s

15.5 13.2

测试中的平均数值
更快的写入速度，GB/s

11.9 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA81GS6CJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 36
读取速度，GB/s

13.2 15.5
写入速度，GB/s

8.4 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 2734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XF875V-HYA 8GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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Kingston KHX1600C9D3/8G 8GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Avant Technology J641GU42J9266NL 8GB

Avant Technology J641GU42J9266NL 8GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB