Samsung M378B5273DH0-CH9 4GB vs A-DATA Technology AO1P32NCSV1-BDBS 16GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

A-DATA Technology AO1P32NCSV1-BDBS 16GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 11% 更低的延时

A-DATA Technology AO1P32NCSV1-BDBS 16GB

需要考虑的原因
A-DATA Technology AO1P32NCSV1-BDBS 16GB

报告一个错误

更快的读取速度，GB/s

16.5 13.3

测试中的平均数值
更快的写入速度，GB/s

13.5 8.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

A-DATA Technology AO1P32NCSV1-BDBS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 46
读取速度，GB/s

13.3 16.5
写入速度，GB/s

8.3 13.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2176 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT8G4D26AFTA.16FBD 8GB

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Crucial Technology BLS8G4D240FSB.16FARG 8GB

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Samsung M378B5273DH0-CH9 4GB

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A-DATA Technology AO1P32NCSV1-BDBS 16GB

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Micron Technology 18ADF2G72AZ-2G3A1 16GB

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Kingston 99U5584-005.A00LF 4GB

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A-DATA Technology DDR3 1333G 2GB

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Chun Well Technology Holding Limited D4U1636181DC 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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G Skill Intl F4-3600C16-16GVKC 16GB