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Samsung M378B5273DH0-CH9 4GB
G Skill Intl F3-14900CL9-4GBXL 4GB

Samsung M378B5273DH0-CH9 4GB vs G Skill Intl F3-14900CL9-4GBXL 4GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
G Skill Intl F3-14900CL9-4GBXL 4GB

G Skill Intl F3-14900CL9-4GBXL 4GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
G Skill Intl F3-14900CL9-4GBXL 4GB 需要考虑的原因
G Skill Intl F3-14900CL9-4GBXL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 41
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F3-14900CL9-4GBXL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    41 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 15.8
  • 写入速度，GB/s
    8.3 left arrow 10.0
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 2538

Samsung M378B5273DH0-CH9 4GB RAM的比较

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

G Skill Intl F3-14900CL9-4GBXL 4GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F3-14900CL9-4GBXL 4GB
G Skill Intl F3-14900CL9-4GBXL 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965669-027.A00G 16GB
Kingston 9965669-027.A00G 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM