Samsung M378B5273DH0-CH9 4GB vs Crucial Technology BLE4G4D26AFEA.8FAD 4GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

需要考虑的原因
Crucial Technology BLE4G4D26AFEA.8FAD 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 -17% 更低的延时
更快的读取速度，GB/s

17 13.3

测试中的平均数值
更快的写入速度，GB/s

12.4 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 35
读取速度，GB/s

13.3 17.0
写入速度，GB/s

8.3 12.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2176 2982

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Samsung M378B5273DH0-CH9 4GB

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Crucial Technology BLE4G4D26AFEA.8FAD 4GB

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

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Corsair CMSX16GX4M2A2400C16 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

Ramaxel Technology RMSA3260MH78HAF-2666 8GB

Samsung M471B1G73BH0-YK0 8GB

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Kingston 9905700-013.A00G 8GB

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SK Hynix HYMP125U72CP8-Y5 2GB

SK Hynix HYMP125U72CP8-Y5 2GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Corsair CM4X8GD3000C16K4 8GB

Corsair CM4X8GD3000C16K4 8GB