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Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
比较
Samsung M378B5273DH0-CH9 4GB vs Crucial Technology BLS16G4D30AESB.M16FE 16GB
总分
Samsung M378B5273DH0-CH9 4GB
总分
Crucial Technology BLS16G4D30AESB.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4D30AESB.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
41
左右 -58% 更低的延时
更快的读取速度,GB/s
18.5
13.3
测试中的平均数值
更快的写入速度,GB/s
14.1
8.3
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
26
读取速度,GB/s
13.3
18.5
写入速度,GB/s
8.3
14.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2176
3596
Samsung M378B5273DH0-CH9 4GB RAM的比较
G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905469-143.A00LF 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-4266C19-8GTZA 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Transcend Information TS2GSH64V1B 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston RB24D4U7S8MB-8 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A2K43BB1-CRC 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
AMD AE34G1601U1 4GB
G Skill Intl F4-2133C15-8GNS 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
报告一个错误
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Bug description
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