RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378B5273EB0-CK0 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Samsung M378B5273EB0-CK0 4GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分
star star star star star
Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分
star star star star star
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异 规格 评论

差异

Samsung M378B5273EB0-CK0 4GB 需要考虑的原因
Samsung M378B5273EB0-CK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.6 left arrow 13.6
    测试中的平均数值
Crucial Technology BLS8G4D240FSA.16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 37
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    10.8 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273EB0-CK0 4GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 36
  • 读取速度，GB/s
    14.6 left arrow 13.6
  • 写入速度，GB/s
    9.6 left arrow 10.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2409 left arrow 2690

Samsung M378B5273EB0-CK0 4GB RAM的比较

Kingston KVR24N17S8/4 4GB
Samsung M378A5244BB0-CRC 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Avant Technology W6451U67J5213NB 4GB
Avant Technology W6451U67J5213NB 4GB
内存RAM
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905678-138.A00G 8GB
Kingston 9905678-138.A00G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM