Samsung M378B5273EB0-CK0 4GB vs Kingston 99U5471-012.A00LF 4GB

总分

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

差异规格评论

差异

Samsung M378B5273EB0-CK0 4GB

需要考虑的原因
Samsung M378B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 10% 更低的延时
更快的读取速度，GB/s

14.6 12.7

测试中的平均数值
更快的写入速度，GB/s

9.6 7.5

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378B5273EB0-CK0 4GB

Kingston 99U5471-012.A00LF 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 41
读取速度，GB/s

14.6 12.7
写入速度，GB/s

9.6 7.5
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2409 2039

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-1333C9-4GIS 4GB

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G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

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G Skill Intl F4-4266C19-8GTRS 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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G Skill Intl F4-3200C16-16GTZSK 16GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Corsair CMK16GX4M2B3600C18 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Kllisre KRE-D3U1600M/8G 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Samsung M378A1K43BB1-CPB 8GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK64GX4M4A2400C16 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB