Samsung M378B5273EB0-CK0 4GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异规格评论

差异

Samsung M378B5273EB0-CK0 4GB

需要考虑的原因
Samsung M378B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 57

左右 35% 更低的延时
更快的读取速度，GB/s

14.6 9.5

测试中的平均数值
更快的写入速度，GB/s

9.6 7.4

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273EB0-CK0 4GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 57
读取速度，GB/s

14.6 9.5
写入速度，GB/s

9.6 7.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2409 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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