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Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB

Samsung M378B5673EH1-CF8 2GB vs A-DATA Technology AO1P26KCST2-BWWS 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
A-DATA Technology AO1P26KCST2-BWWS 16GB 需要考虑的原因
A-DATA Technology AO1P26KCST2-BWWS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    12.7 left arrow 15.6
  • 写入速度，GB/s
    7.5 left arrow 14.6
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3136

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

A-DATA Technology AO1P26KCST2-BWWS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK32GX4M4K4133C19 8GB
Corsair CMK32GX4M4K4133C19 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK128GX4M8A2666C16 16GB
Corsair CMK128GX4M8A2666C16 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Team Group Inc. Team-Elite-2400 4GB
Team Group Inc. Team-Elite-2400 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMK32GX4M4C3000C16 8GB
Corsair CMK32GX4M4C3000C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Asgard VMA41UF-MEC1U2BQ2 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston KF3000C15D4/8GX 8GB
Kingston KF3000C15D4/8GX 8GB
内存RAM
Kingston 9965516-049.A00LF 8GB
Kingston 9965516-049.A00LF 8GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
内存RAM