Corsair CMZ16GX3M2A2400C10 8GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

A-DATA Technology AM2P26KC8T1-BXRS 8GB

需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

14.9 11.4

测试中的平均数值
更快的写入速度，GB/s

10.7 7.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

11.4 14.9
写入速度，GB/s

7.4 10.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1683 2811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3333C16D4/16GX 16GB

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Samsung M393B2G70BH0-CH9 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology BLS8G4D26BFSC.16FD2 8GB

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Apacer Technology 78.D1GMM.AU10B 16GB

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Crucial Technology CT16G4DFRA266.C8FE 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-4266C19-32GTZR 32GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Asgard VMA45UG-MEC1U2AW1 8GB

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Samsung M393A5143DB0-CRC 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB