Samsung M378B5673EH1-CF8 2GB vs Corsair CMD8GX4M2B3466C18 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Corsair CMD8GX4M2B3466C18 4GB

需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 28

左右 -40% 更低的延时
更快的读取速度，GB/s

19 12.7

测试中的平均数值
更快的写入速度，GB/s

15.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMD8GX4M2B3466C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 20
读取速度，GB/s

12.7 19.0
写入速度，GB/s

7.5 15.3
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Chun Well Technology Holding Limited CL22-22-22 D4-3200

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

SK Hynix HMA81GU6DJR8N-XN 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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Kingston 9905469-143.A00LF 4GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB