Samsung M378B5673EH1-CF8 2GB vs Corsair CMK16GX4M4A2666C15 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMK16GX4M4A2666C15 4GB

Corsair CMK16GX4M4A2666C15 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 30% 更低的延时

Corsair CMK16GX4M4A2666C15 4GB

需要考虑的原因
Corsair CMK16GX4M4A2666C15 4GB

报告一个错误

更快的读取速度，GB/s

13.8 12.7

测试中的平均数值
更快的写入速度，GB/s

10.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMK16GX4M4A2666C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 40
读取速度，GB/s

12.7 13.8
写入速度，GB/s

7.5 10.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMK32GX4M2Z2400C16 16GB

Corsair CMK32GX4M2Z2400C16 16GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

Micron Technology 16JSF51264HZ-1G1D1 4GB

Micron Technology 16JSF51264HZ-1G1D1 4GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Patriot Memory (PDP Systems) PSD48G21332S 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3200C16-8GTZRX 8GB

G Skill Intl F4-3200C16-8GTZRX 8GB