Samsung M378B5673EH1-CF8 2GB vs Corsair CMSX64GX4M2A2666C18 32GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Corsair CMSX64GX4M2A2666C18 32GB

需要考虑的原因
Corsair CMSX64GX4M2A2666C18 32GB

报告一个错误

更快的读取速度，GB/s

15.2 12.7

测试中的平均数值
更快的写入速度，GB/s

13.4 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMSX64GX4M2A2666C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

12.7 15.2
写入速度，GB/s

7.5 13.4
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBE21UE8ACUA-8G-E 2GB

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G Skill Intl F4-2666C18-16GRS 16GB

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Kingston 9905403-02X.B00LF 4GB

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Kingston 99U5584-005.A00LF 4GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3000C16-16GVRB 16GB

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Wilk Elektronik S.A. GR2666S464L19/16G 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMD8GX4M2B3466C18 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston HP26D4S9S8HJ-8 8GB

Kingston HP26D4S9S8HJ-8 8GB