Samsung DDR3 8GB 1600MHz 8GB vs Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

需要考虑的原因
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.4 14.9

测试中的平均数值
更快的写入速度，GB/s

10.5 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 16.4
写入速度，GB/s

9.6 10.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3039

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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G Skill Intl F4-2666C18-16GRS 16GB

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Kingston 9905403-02X.B00LF 4GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMD32GX4M4C3200C14M 8GB