Samsung M378B5673EH1-CF8 2GB vs Corsair CMV8GX4M1L2400C16 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Corsair CMV8GX4M1L2400C16 8GB

Corsair CMV8GX4M1L2400C16 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 96

左右 71% 更低的延时
更快的读取速度，GB/s

12.7 11

测试中的平均数值
更快的写入速度，GB/s

7.5 4.8

测试中的平均数值

Corsair CMV8GX4M1L2400C16 8GB

需要考虑的原因
Corsair CMV8GX4M1L2400C16 8GB

报告一个错误

更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Corsair CMV8GX4M1L2400C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 96
读取速度，GB/s

12.7 11.0
写入速度，GB/s

7.5 4.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9S3L/8G 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB