Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 33% 更低的延时

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.7

测试中的平均数值
更快的写入速度，GB/s

9.5 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 42
读取速度，GB/s

12.7 15.2
写入速度，GB/s

7.5 9.5
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1988 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T3354BZ0-CCC 256MB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

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Kingston 99U5700-028.A00G 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Hewlett-Packard 7EH64AA#ABC 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Apacer Technology 76.B305G.D500B 4GB

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G Skill Intl F4-2800C14-16GVK 16GB

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT16G4DFRA32A.C16FN 16GB

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Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB