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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4DFD824A.C16FDR2 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Crucial Technology CT8G4DFD824A.C16FDR2 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 22
  • 读取速度，GB/s
    12.7 left arrow 18.5
  • 写入速度，GB/s
    7.5 left arrow 13.7
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3283

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
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Elpida EBJ41UF8BDW0-GN-F 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
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内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
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Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Corsair CMK64GX4M4B3000C15 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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内存RAM
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Samsung M471B5773DH0-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
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Samsung M471B1G73DB0-YK0 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
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Kingston 99U5474-022.A00LF 2GB
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G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Corsair CMK16GX4M4A2133C13 4GB
内存RAM
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Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
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