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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4DFD824A.M16FB 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Crucial Technology CT8G4DFD824A.M16FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFD824A.M16FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 28
  • 读取速度，GB/s
    12.7 left arrow 16.4
  • 写入速度，GB/s
    7.5 left arrow 11.9
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3036

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston KF3200C16D4/8GX 8GB
Kingston KF3200C16D4/8GX 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KF3200C20S4/16GX 16GB
Kingston KF3200C20S4/16GX 16GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Mushkin MES4S213FF16G28 16GB
Mushkin MES4S213FF16G28 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
V-GEN D4R8GL24A8R 8GB
V-GEN D4R8GL24A8R 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P32NC8W1-BDAS 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK128GX4M4A2666C16 32GB
Corsair CMK128GX4M4A2666C16 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM