Samsung M393B1G70BH0-CK0 8GB vs Samsung M378A1G43TB1-CTD 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Samsung M378A1G43TB1-CTD 8GB

需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 51

左右 -82% 更低的延时
更快的读取速度，GB/s

16.6 9.8

测试中的平均数值
更快的写入速度，GB/s

13.7 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Samsung M378A1G43TB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 28
读取速度，GB/s

9.8 16.6
写入速度，GB/s

8.1 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99P5471-002.A00LF 2GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingston ACR26D4U9S8HJ-8 8GB

Kingston ACR26D4U9S8HJ-8 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMW32GX4M4K4266C19 8GB

Corsair CMW32GX4M4K4266C19 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMD32GX4M2C3200C16 16GB

Corsair CMD32GX4M2C3200C16 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F4-3733C17-16GTZSW 16GB

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB