Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT8G4SFD8213.C16FBR2 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBR2 8GB

报告一个错误

更快的读取速度，GB/s

17.1 12.7

测试中的平均数值
更快的写入速度，GB/s

11.4 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.7 17.1
写入速度，GB/s

7.5 11.4
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT8G4SFD8213.C16FBR2 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston X0N6VG-HYD2 16GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

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SK Hynix HMA84GR7MFR4N-UH 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Kingston KHX2400C12D4/8GX 8GB