Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-2666C19-16GIS 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

G Skill Intl F4-2666C19-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2666C19-16GIS 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.7

测试中的平均数值
更快的写入速度，GB/s

12.8 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-2666C19-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.7 16.5
写入速度，GB/s

7.5 12.8
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2A2133C13 4GB

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

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SK Hynix HMT351U6AFR8C-H9 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 99U5624-003.A00G 8GB

Kingston 99U5624-003.A00G 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB