Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-2666C19-16GIS 16GB

総合得点

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

総合得点

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

相違点仕様コメント

相違点

Samsung M378B5673EH1-CF8 2GB

考慮すべき理由
Samsung M378B5673EH1-CF8 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 34

周辺 18% 低遅延

G Skill Intl F4-2666C19-16GIS 16GB

考慮すべき理由
G Skill Intl F4-2666C19-16GIS 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.5 12.7

テスト平均値
書き込み速度の高速化、GB/s

12.8 7.5

テスト平均値
より高いメモリ帯域幅、mbps

21300 8500

周辺 2.51 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-2666C19-16GIS 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 34
読み出し速度、GB/s

12.7 16.5
書き込み速度、GB/秒

7.5 12.8
メモリ帯域幅、mbps

8500 21300

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1988 3193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-2666C19-16GIS 16GB

G Skill Intl F4-2666C19-16GIS 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

takeMS International AG TMS4GB364E081139EM 4GB

takeMS International AG TMS4GB364E081139EM 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston 9905702-029.A00G 8GB

Kingston 9905702-029.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMK32GX4M4A2133C15 8GB

Corsair CMK32GX4M4A2133C15 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905678-023.A00G 8GB

Kingston 9905678-023.A00G 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB