Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C16-4GRK 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3200C16-4GRK 4GB

G Skill Intl F4-3200C16-4GRK 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

G Skill Intl F4-3200C16-4GRK 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更快的读取速度，GB/s

19 12.7

测试中的平均数值
更快的写入速度，GB/s

15.2 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3200C16-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 25
读取速度，GB/s

12.7 19.0
写入速度，GB/s

7.5 15.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3541

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston MSI32D4S2S1ME-8 8GB

Kingston MSI32D4S2S1ME-8 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMK64GX4M8B2800C14 8GB

Corsair CMK64GX4M8B2800C14 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB