Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C16-8GIS 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

G Skill Intl F4-3200C16-8GIS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GIS 8GB

报告一个错误

更快的读取速度，GB/s

18.2 12.7

测试中的平均数值
更快的写入速度，GB/s

14.2 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3200C16-8GIS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.7 18.2
写入速度，GB/s

7.5 14.2
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD824A.C16FHD 16GB

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Corsair CMD16GX3M2A2133C9 8GB

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Peak Electronics 256X64M-67E 2GB

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Kingston 9905625-036.A00G 16GB

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Samsung M471B5173QH0-YK0 4GB

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Samsung M471A2G43BB2-CWE 16GB

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Kingston 9905403-090.A01LF 4GB

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Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-4000C18-32GTRS 32GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-4000C19-16GTRS 16GB

G Skill Intl F4-4000C19-16GTRS 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB