Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3200C16-8GVGB 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

G Skill Intl F4-3200C16-8GVGB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVGB 8GB

报告一个错误

更快的读取速度，GB/s

18.9 12.7

测试中的平均数值
更快的写入速度，GB/s

14.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3200C16-8GVGB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.7 18.9
写入速度，GB/s

7.5 14.6
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905734-059.A00G 16GB

Kingston 9905734-059.A00G 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905700-025.A00G 8GB

Kingston 9905700-025.A00G 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB