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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
71
左右 66% 更低的延时
更快的读取速度,GB/s
16
15.6
测试中的平均数值
更快的写入速度,GB/s
12.5
6.4
测试中的平均数值
需要考虑的原因
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
71
读取速度,GB/s
16.0
15.6
写入速度,GB/s
12.5
6.4
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
1650
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Kingston KP4T2F-PSB 4GB
A-DATA Technology DDR4 2800 8GB
Kingston 99U5474-037.A00LF 4GB
Kingston 9965669-027.A00G 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CMK16GX4M4A2400C14 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2666C15-16GVK 16GB
Team Group Inc. UD5-6400 16GB
A-DATA Technology DDR4 2400 16GB
Hexon Technology Pte Ltd HEXON 1GB
EVGA 8GX-D4-2800-MR 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-3400C16-8GTZ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information TS2GLH64V4B 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KV0M5R-HYD 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2133C15-4GFX 4GB
报告一个错误
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Bug description
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