RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
71
Around 66% lower latency
Faster reading speed, GB/s
16
15.6
Average value in the tests
Faster write speed, GB/s
12.5
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
71
Read speed, GB/s
16.0
15.6
Write speed, GB/s
12.5
6.4
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
1650
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX2800C14D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SK Hynix HMT325S6CFR8C-H9 2GB
Transcend Information JM3200HLE-32G 32GB
Samsung M386B4G70DM0-CMA4 32GB
V-Color Technology Inc. TN416G24D817-VHA/R 16GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston KYXC0V-MID 16GB
G Skill Intl F3-1333C9-4GIS 4GB
King Tiger Technology Tigo-2400MHz-4G 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CMK16GX4M1A2666C16 16GB
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Corsair CMY16GX3M4A2133C8 4GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M378A2G43BB3-CWE 16GB
Kingston 99U5584-004.A00LF 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M395T2863QZ4-CF76 1GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Report a bug
×
Bug description
Source link