Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3466C16-8GVR 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

G Skill Intl F4-3466C16-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更快的读取速度，GB/s

19.4 12.7

测试中的平均数值
更快的写入速度，GB/s

13.6 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3466C16-8GVR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 25
读取速度，GB/s

12.7 19.4
写入速度，GB/s

7.5 13.6
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 3519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965516-112.A00LF 16GB

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Transcend Information TS2GLH64V1B 16GB

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PNY Electronics PNY 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT16G4DFRA32A.C8FE 16GB

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Corsair CMZ8GX3M2A1866C9 4GB

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Corsair CMX8GX3M2A1600C9 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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G Skill Intl F4-3200C16-8GTZRX 8GB

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SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB