Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-4000C18-32GVK 32GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

G Skill Intl F4-4000C18-32GVK 32GB

需要考虑的原因
G Skill Intl F4-4000C18-32GVK 32GB

报告一个错误

更快的读取速度，GB/s

17.8 12.7

测试中的平均数值
更快的写入速度，GB/s

16.1 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4000C18-32GVK 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.7 17.8
写入速度，GB/s

7.5 16.1
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-8GTZB 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-4000C18-32GTZN 32GB

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Corsair CMW32GX4M4Z3200C16 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Gloway International (HK) STK4U2400D17041C 4GB

Samsung M471B1G73QH0-YK0 8GB

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Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB

Kingston 9905469-143.A00LF 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston HP32D4U2S1ME-8 8GB

Kingston HP32D4U2S1ME-8 8GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB