Samsung M378B5673EH1-CF8 2GB vs Kingston 9905702-014.A00G 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 35% 更低的延时

Kingston 9905702-014.A00G 8GB

需要考虑的原因
Kingston 9905702-014.A00G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 12.7

测试中的平均数值
更快的写入速度，GB/s

10.8 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905702-014.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 43
读取速度，GB/s

12.7 16.7
写入速度，GB/s

7.5 10.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 3223

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Kingston 9905702-014.A00G 8GB

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Corsair CMT128GX4M4C3200C16 32GB

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Samsung M393B5270CH0-CH9 4GB

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Chun Well Technology Holding Limited D4U1636181DC 16GB

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Team Group Inc. TEAMGROUP-SD4-2400 16GB

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G Skill Intl F4-4000C18-16GVK 16GB

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Kingston KHX2133C11D3/4GX 4GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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A-DATA Technology AO1P32MCST2-BW4S 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB