Samsung M471A5244CB0-CWE 4GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 44

左右 14% 更低的延时
更快的读取速度，GB/s

15.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.0 11.6

测试中的平均数值

SK Hynix HMA851S6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 44
读取速度，GB/s

15.5 14.9
写入速度，GB/s

12.0 11.6
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2283 2191

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX3600C18D4/16GX 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

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Samsung M471A5244CB0-CWE 4GB

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SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

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Team Group Inc. Vulcan-1600 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-3333C16-8GTZKW 8GB

OCZ OCZ2RPX8002G 2GB

OCZ OCZ2RPX8002G 2GB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Crucial Technology BL32G36C16U4BL.M16FB 32GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB