Samsung M378B5673EH1-CF8 2GB vs Kingston 99U5713-001.A00G 4GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 99U5713-001.A00G 4GB

Kingston 99U5713-001.A00G 4GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 76

左右 63% 更低的延时
更快的写入速度，GB/s

7.5 6.0

测试中的平均数值

Kingston 99U5713-001.A00G 4GB

需要考虑的原因
Kingston 99U5713-001.A00G 4GB

报告一个错误

更快的读取速度，GB/s

14.2 12.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 99U5713-001.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 76
读取速度，GB/s

12.7 14.2
写入速度，GB/s

7.5 6.0
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1453

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT32G4SFD8266.C16FE 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Patriot Memory (PDP Systems) PSD34G160081S 4GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Corsair CMN32GX4M2Z3600C16 16GB

Corsair CMN32GX4M2Z3600C16 16GB

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Qimonda 64T128020EDL2.5C2 1GB

Corsair CMK8GX4M1E3200C16 8GB

Corsair CMK8GX4M1E3200C16 8GB