Samsung M378B5673EH1-CF8 2GB vs Micron Technology 8ATF1G64AZ-2G1A1 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Micron Technology 8ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1A1 8GB

报告一个错误

更快的读取速度，GB/s

15.2 12.7

测试中的平均数值
更快的写入速度，GB/s

11.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.7 15.2
写入速度，GB/s

7.5 11.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2774

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325U6CFR8C-PB 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Apacer Technology 78.C2GFA.AF30B 8GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Samsung V-GeN D4S4GL32A8TL 4GB

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Samsung M4 70T5663QZ3-CF7 2GB

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Apacer Technology 78.A1GC6.9H10C 2GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB