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Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Crucial Technology CT8G4DFD8213.M16FB 8GB

总分
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.M16FB 8GB

Crucial Technology CT8G4DFD8213.M16FB 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 30
    左右 3% 更低的延时
Crucial Technology CT8G4DFD8213.M16FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.M16FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 30
  • 读取速度，GB/s
    14.3 left arrow 16.7
  • 写入速度，GB/s
    10.1 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2982

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Crucial Technology CT8G4DFD8213.M16FB 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-2133C15-4GFX 4GB
G Skill Intl F4-2133C15-4GFX 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C18-8GVK 8GB
G Skill Intl F4-3600C18-8GVK 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK32GX4M4C3333C16 8GB
Corsair CMK32GX4M4C3333C16 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
内存RAM