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Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB

Samsung M378B5673EH1-CF8 2GB vs Patriot Memory (PDP Systems) PSD416G266681 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G266681 16GB

Patriot Memory (PDP Systems) PSD416G266681 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Patriot Memory (PDP Systems) PSD416G266681 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G266681 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.7 left arrow 14.9
  • 写入速度，GB/s
    7.5 left arrow 10.2
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2942

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Patriot Memory (PDP Systems) PSD416G266681 16GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMK16GX4M2K4333C19 8GB
Corsair CMK16GX4M2K4333C19 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMW32GX4M4Z3200C16 8GB
Corsair CMW32GX4M4Z3200C16 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905678-138.A00G 8GB
Kingston 9905678-138.A00G 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C17-8GTZR 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F4-3733C17-8GTZSW 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM