Samsung M378B5673EH1-CF8 2GB vs Samsung V-GeN D4S8GL32A8TL 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 64

左右 56% 更低的延时

Samsung V-GeN D4S8GL32A8TL 8GB

需要考虑的原因
Samsung V-GeN D4S8GL32A8TL 8GB

报告一个错误

更快的读取速度，GB/s

16.8 12.7

测试中的平均数值
更快的写入速度，GB/s

8.3 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Samsung V-GeN D4S8GL32A8TL 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 64
读取速度，GB/s

12.7 16.8
写入速度，GB/s

7.5 8.3
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 2052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-001.A00LF 4GB

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Kingston 9905403-038.A00LF 4GB

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Kingston 9905598-044.A00G 16GB

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AMD AE34G1601U1 4GB

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Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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