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Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Samsung M378B5673EH1-CF8 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    12.7 left arrow 17.2
  • 写入速度，GB/s
    7.5 left arrow 13.0
  • 内存带宽，mbps
    8500 left arrow 19200
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3004

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Hewlett-Packard 7EH61AA# 8GB
Hewlett-Packard 7EH61AA# 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMU16GX4M2A2400C16 8GB
Corsair CMU16GX4M2A2400C16 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMK16GX4M1B3000C15 16GB
Corsair CMK16GX4M1B3000C15 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston KHX2133C13D4/4GX 4GB
Kingston KHX2133C13D4/4GX 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX4133C19D4/8GX 8GB
Kingston KHX4133C19D4/8GX 8GB
内存RAM