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Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Samsung M378B5673EH1-CF8 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    12.7 left arrow 18.0
  • 写入速度，GB/s
    7.5 left arrow 16.5
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3729

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.C1GET.9K10C 8GB
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Kingston K531R8-MIN 4GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
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ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
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Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3600C19-8GSXK 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
内存RAM
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内存RAM
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Samsung 1600 CL10 Series 8GB
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Micron Technology 8ATF1G64AZ-2G6J1 8GB
内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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内存RAM
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Team Group Inc. TEAMGROUP-UD4-3000 8GB
内存RAM
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Samsung M393B1K70QB0-CK0 8GB
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Corsair CMWX8GD3200C16W4 8GB
内存RAM
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Kingston KHX8500D2K2/2GN 1GB
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Samsung M471A2K43CB1-CRCR 16GB
内存RAM