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Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB

Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BLS4G4D240FSE.8FAR 4GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FAR 4GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
Crucial Technology BLS4G4D240FSE.8FAR 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FAR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 24
  • 读取速度，GB/s
    14.4 left arrow 15.1
  • 写入速度，GB/s
    9.5 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2601

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS4G4D240FSE.8FAR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
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Kingston 99U5474-010.A00LF 2GB
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A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2400 2OZ 8GB
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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takeMS International AG TMS2GB264D083805EV 2GB
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G Skill Intl F4-3200C16-16GTZKW 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
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Corsair CM4X4GF2400C16S2 4GB
内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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Kingston HP24D4U7S8MH-8 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
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Samsung 1600 CL10 Series 8GB
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Corsair CMD32GX4M4A2666C15 8GB
内存RAM
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Kingston 99U5428-018.A00LF 8GB
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G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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ASint Technology SLA302G08-MGJHB 4GB
内存RAM