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Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4SFS832A.M8FE 16GB

Samsung M378B5673FH0-CH9 2GB vs Crucial Technology CT16G4SFS832A.M8FE 16GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 37
    左右 5% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 12.7
    测试中的平均数值
Crucial Technology CT16G4SFS832A.M8FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFS832A.M8FE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 37
  • 读取速度，GB/s
    14.4 left arrow 12.7
  • 写入速度，GB/s
    9.5 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2734

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingmax Semiconductor GSLF62F-D8---------- 4GB
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