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Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology BLS8G4D26BFSE.16FE 8GB

总分
star star star star star
Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
Crucial Technology BLS8G4D26BFSE.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 63
    左右 -117% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 29
  • 读取速度，GB/s
    8.1 left arrow 17.3
  • 写入速度，GB/s
    7.5 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1945 left arrow 3134

Samsung M393B2G70BH0-YK0 16GB RAM的比较

Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M386B4G70DM0-CMA4 32GB
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Good Wealth Technology Ltd. 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
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Avant Technology W641GU48J7240ND 8GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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A-DATA Technology VDQVE1B16 2GB
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Corsair CM4B8G1J2400A16K2-ON 8GB
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A-DATA Technology DDR3 1600 4GB
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Corsair CM4B4G1J2400A14K 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905458-017.A01LF 4GB
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PUSKILL PJ16TFK1GM8 16GB
内存RAM