Samsung M378B5673FH0-CH9 2GB vs Crucial Technology CT4G4DFS8266.C8FF 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 81

左右 57% 更低的延时
更快的写入速度，GB/s

9.5 7.9

测试中的平均数值

Crucial Technology CT4G4DFS8266.C8FF 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FF 4GB

报告一个错误

更快的读取速度，GB/s

15.2 14.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 81
读取速度，GB/s

14.4 15.2
写入速度，GB/s

9.5 7.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2321 1668

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX3M2A1866C9 8GB

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Panram International Corporation PUD43000C158G2NJK 8GB

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Samsung M393A4K40CB1-CRC 32GB

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Samsung M378T5663QZ3-CF7 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M2A2400C16 8GB

Corsair CMK16GX4M2A2400C16 8GB