Samsung M378B5673FH0-CH9 2GB vs Kingston KVR24N17S8/4 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

更快的写入速度，GB/s

9.5 7.1

测试中的平均数值

Kingston KVR24N17S8/4 4GB

需要考虑的原因
Kingston KVR24N17S8/4 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 35

左右 -67% 更低的延时
更快的读取速度，GB/s

15.4 14.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Kingston KVR24N17S8/4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 21
读取速度，GB/s

14.4 15.4
写入速度，GB/s

9.5 7.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2321 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F3-1333C9-4GIS 4GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston KVR24N17S8/4 4GB

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Corsair CMX4GX3M2A1600C9 2GB

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A-DATA Technology AO1P32MCST2-BW4S 16GB

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Kingston KHX2933C17D4/16G 16GB

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Kingston KHX318C10FR/8G 8GB

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Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 99U5734-014.A00G 16GB

Kingston 99U5734-014.A00G 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB