Samsung M391B5673EH1-CH9 2GB vs Kingston KHX2933C15D4/8GX 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston KHX2933C15D4/8GX 8GB

Kingston KHX2933C15D4/8GX 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Kingston KHX2933C15D4/8GX 8GB

需要考虑的原因
Kingston KHX2933C15D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

17.3 12.8

测试中的平均数值
更快的写入速度，GB/s

14.2 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston KHX2933C15D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

12.8 17.3
写入速度，GB/s

9.0 14.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 3437

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFD8213.M16FB 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Samsung M393A2K43BB1-CPB 16GB

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Corsair CMX8GX3M2A1600C11 4GB

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Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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Patriot Memory (PDP Systems) PSD48G266681S 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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Samsung 1600 CL10 Series 8GB

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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

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Crucial Technology BL16G32C16S4B.16FE 16GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology BLS4G4D240FSC.8FARG 4GB

Crucial Technology BLS4G4D240FSC.8FARG 4GB